Product Category ::IGBT Modules
Manufacturer ::Infineon Technologies
Description:IGBT Modules IGBT MODULES 1700V 650A
Configuration ::Dual Parallel
Product Category ::IGBT Modules
Maximum Operating Temperature ::+ 125 C
Gate-Emitter Leakage Current ::400 nA
Product Category ::IGBT Modules
Continuous Collector Current at 25 C ::45 A
Product Category ::IGBT Modules
Collector- Emitter Voltage VCEO Max ::1200 V
Package / Case ::EASY2
Gate-Emitter Leakage Current ::400 nA
Product Category ::IGBT Modules
Continuous Collector Current at 25 C ::370 A
Transistor Polarity ::PNP
Product Category ::Bipolar Transistors - BJT
Mounting Style ::SMD/SMT
Transistor Polarity ::NPN
Product Category ::Bipolar Transistors - BJT
Maximum DC Collector Current ::0.8 A
Transistor Polarity ::NPN
Product Category ::Bipolar Transistors - BJT
Mounting Style ::SMD/SMT
Transistor Polarity ::NPN
Product Category ::Bipolar Transistors - BJT
Mounting Style ::SMD/SMT
Transistor Polarity ::PNP
Product Category ::Bipolar Transistors - BJT
Mounting Style ::SMD/SMT
Off-State Leakage Current @ VDRM IDRM ::5 uA
On-State Voltage ::8 V
Product Category ::Sidacs
Off-State Leakage Current @ VDRM IDRM ::5 uA
On-State Voltage ::8 V
Product Category ::Sidacs