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| Gate-Emitter Leakage Current :: | 400 NA | Product Category :: | IGBT Modules |
|---|---|---|---|
| Continuous Collector Current At 25 C :: | 370 A | Pd - Power Dissipation :: | 1450 W |
| Collector- Emitter Voltage VCEO Max :: | 1200 V | Package / Case :: | 62 Mm |
| Maximum Operating Temperature :: | + 125 C | Configuration :: | Single Dual Emitter |
| Collector-Emitter Saturation Voltage :: | 2.1 V | Product :: | IGBT Silicon Modules |
| Manufacturer :: | Infineon Technologies |
The BSM200GA120DLCS,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Contact Person: Miss. Coral
Tel: +86 15211040646