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F3L30R06W1E3_B11

Name: F3L30R06W1E3_B11
Brand: Sensor (HK) Limited
Availability: InStock

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F3L30R06W1E3_B11

Large Image : F3L30R06W1E3_B11

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Description:	IGBT Modules IGBT MODULES 600V 30A

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F3L30R06W1E3_B11

Description

Gate-Emitter Leakage Current ::	400 NA	Product Category ::	IGBT Modules
Continuous Collector Current At 25 C ::	45 A	Pd - Power Dissipation ::	150 W
Collector- Emitter Voltage VCEO Max ::	600 V	Package / Case ::	Module
Maximum Operating Temperature ::	+ 150 C	Configuration ::	3-Phase
Collector-Emitter Saturation Voltage ::	1.55 V	Product ::	IGBT Silicon Modules
Manufacturer ::	Infineon Technologies

The F3L30R06W1E3_B11,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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