JANS1N5417US/TR

Name: JANS1N5417US/TR
Brand: Sensor (HK) Limited
Availability: InStock

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Description:	DIODE GEN PURP 200V 3A B SQ-MELF

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Description

Category:	Discrete Semiconductor Products Diodes Rectifiers Single Diodes	Product Status:	Active
Current - Reverse Leakage @ Vr:	1 µA @ 150 V	Mounting Type:	Surface Mount
Voltage - Forward (Vf) (Max) @ If:	1.5 V @ 9 A	Package:	Tape & Reel (TR)
Series:	Military, MIL-PRF-19500/411	Capacitance @ Vr, F:	-
Supplier Device Package:	B, SQ-MELF	Reverse Recovery Time (trr):	150 Ns
Mfr:	Microchip Technology	Technology:	Standard
Operating Temperature - Junction:	-65°C ~ 175°C	Package / Case:	SQ-MELF, B
Voltage - DC Reverse (Vr) (Max):	200 V	Current - Average Rectified (Io):	3A
Speed:	Fast Recovery =< 500ns, > 200mA (Io)