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PBSS5130PAP,115

PBSS5130PAP,115
PBSS5130PAP,115

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Description: NOW NEXPERIA PBSS5130PAP - SMALL

PBSS5130PAP,115

Description
Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays Current - Collector (Ic) (Max): 1A
Product Status: Active Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount Frequency - Transition: 125MHz
Package: Bulk Series: -
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 1A Voltage - Collector Emitter Breakdown (Max): 30V
Supplier Device Package: 6-HUSON (2x2) Mfr: NXP USA Inc.
Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 510mW
Package / Case: 6-UFDFN Exposed Pad Operating Temperature: 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 2V Base Product Number: PBSS5130

Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 1A 125MHz 510mW Surface Mount 6-HUSON (2x2)

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Sensor (HK) Limited

Contact Person: Liu Guo Xiong

Tel: +8618200982122

Fax: 86-755-8255222

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