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PBSS4230PANP,115

PBSS4230PANP,115
PBSS4230PANP,115

Large Image :  PBSS4230PANP,115

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Description: NOW NEXPERIA PBSS4230PANP - SMAL

PBSS4230PANP,115

Description
Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays Current - Collector (Ic) (Max): 2A
Product Status: Active Transistor Type: NPN, PNP
Mounting Type: Surface Mount Frequency - Transition: 120MHz
Package: Bulk Series: -
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (Max): 30V
Supplier Device Package: 6-HUSON (2x2) Mfr: NXP USA Inc.
Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 510mW
Package / Case: 6-UFDFN Exposed Pad Operating Temperature: 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Base Product Number: PBSS4230

Bipolar (BJT) Transistor Array NPN, PNP 30V 2A 120MHz 510mW Surface Mount 6-HUSON (2x2)

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