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BC856S E6433

BC856S E6433
BC856S E6433

Large Image :  BC856S E6433

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Description: BIPOLAR GEN PURPOSE TRANSISTOR

BC856S E6433

Description
Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays Current - Collector (Ic) (Max): 100mA
Product Status: Active Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount Frequency - Transition: 250MHz
Package: Bulk Series: -
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (Max): 65V
Supplier Device Package: SOT-363 Mfr: Infineon Technologies
Current - Collector Cutoff (Max): 15nA (ICBO) Power - Max: 250mW
Package / Case: 6-VSSOP, SC-88, SOT-363 Operating Temperature: 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Base Product Number: BC856

Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 250MHz 250mW Surface Mount SOT-363

Contact Details
Sensor (HK) Limited

Contact Person: Liu Guo Xiong

Tel: +8618200982122

Fax: 86-755-8255222

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