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BCR185E6327

BCR185E6327
BCR185E6327

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Description: BIPOLAR DIGITAL TRANSISTOR

BCR185E6327

Description
Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Current - Collector (Ic) (Max): 100 MA
Product Status: Active Transistor Type: PNP - Pre-Biased
Frequency - Transition: 200 MHz Mounting Type: Surface Mount
Package: Bulk Series: Automotive, AEC-Q101
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50 V
Supplier Device Package: PG-SOT23-3-1 Resistor - Base (R1): 10 KOhms
Mfr: Infineon Technologies Resistor - Emitter Base (R2): 47 KOhms
Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 200 MW
Package / Case: TO-236-3, SC-59, SOT-23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Base Product Number: BCR185

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23-3-1

Contact Details
Sensor (HK) Limited

Contact Person: Liu Guo Xiong

Tel: +8618200982122

Fax: 86-755-8255222

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