BCR135E6433

Name: BCR135E6433
Brand: SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Availability: InStock

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Description:	BIPOLAR DIGITAL TRANSISTOR

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Description

Category:	Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors	Current - Collector (Ic) (Max):	100 MA
Product Status:	Active	Transistor Type:	NPN - Pre-Biased
Frequency - Transition:	150 MHz	Mounting Type:	Surface Mount
Package:	Bulk	Series:	-
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA	Voltage - Collector Emitter Breakdown (Max):	50 V
Supplier Device Package:	PG-SOT23-3-11	Resistor - Base (R1):	10 KOhms
Mfr:	Infineon Technologies	Resistor - Emitter Base (R2):	47 KOhms
Current - Collector Cutoff (Max):	100nA (ICBO)	Power - Max:	200 MW
Package / Case:	TO-236-3, SC-59, SOT-23-3	DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 5mA, 5V
Base Product Number:	BCR135