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| Category: | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs | FET Feature: | - |
|---|---|---|---|
| Vgs(th) (Max) @ Id: | 3.9V @ 80µA | Operating Temperature: | -55°C ~ 150°C (TJ) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Gate Charge (Qg) (Max) @ Vgs: | 12.5 NC @ 10 V |
| Rds On (Max) @ Id, Vgs: | 3Ohm @ 1.1A, 10V | FET Type: | N-Channel |
| Drive Voltage (Max Rds On, Min Rds On): | 10V | Package: | Tape & Reel (TR) Cut Tape (CT) |
| Drain To Source Voltage (Vdss): | 650 V | Vgs (Max): | ±20V |
| Product Status: | Obsolete | Input Capacitance (Ciss) (Max) @ Vds: | 200 PF @ 25 V |
| Mounting Type: | Surface Mount | Series: | CoolMOS™ |
| Supplier Device Package: | PG-TO252-3-11 | Mfr: | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) | Power Dissipation (Max): | 25W (Tc) |
| Technology: | MOSFET (Metal Oxide) | Base Product Number: | SPD02N |
N-Channel 650 V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO252-3-11
Contact Person: Liu Guo Xiong
Tel: +8618200982122
Fax: 86-755-8255222