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SPD02N60C3BTMA1

SPD02N60C3BTMA1
SPD02N60C3BTMA1

Large Image :  SPD02N60C3BTMA1

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Description: MOSFET N-CH 650V 1.8A TO252-3

SPD02N60C3BTMA1

Description
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs FET Feature: -
Vgs(th) (Max) @ Id: 3.9V @ 80µA Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Gate Charge (Qg) (Max) @ Vgs: 12.5 NC @ 10 V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V Package: Tape & Reel (TR) Cut Tape (CT)
Drain To Source Voltage (Vdss): 650 V Vgs (Max): ±20V
Product Status: Obsolete Input Capacitance (Ciss) (Max) @ Vds: 200 PF @ 25 V
Mounting Type: Surface Mount Series: CoolMOS™
Supplier Device Package: PG-TO252-3-11 Mfr: Infineon Technologies
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Power Dissipation (Max): 25W (Tc)
Technology: MOSFET (Metal Oxide) Base Product Number: SPD02N

N-Channel 650 V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO252-3-11

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