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IPD09N03LA G

IPD09N03LA G
IPD09N03LA G

Large Image :  IPD09N03LA G

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Description: MOSFET N-CH 25V 50A TO252-3

IPD09N03LA G

Description
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs FET Feature: -
Vgs(th) (Max) @ Id: 2V @ 20µA Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Gate Charge (Qg) (Max) @ Vgs: 13 NC @ 5 V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 30A, 10V FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Package: Tape & Reel (TR) Cut Tape (CT)
Drain To Source Voltage (Vdss): 25 V Vgs (Max): ±20V
Product Status: Obsolete Input Capacitance (Ciss) (Max) @ Vds: 1642 PF @ 15 V
Mounting Type: Surface Mount Series: OptiMOS™
Supplier Device Package: PG-TO252-3-11 Mfr: Infineon Technologies
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Power Dissipation (Max): 63W (Tc)
Technology: MOSFET (Metal Oxide) Base Product Number: OPD09N

N-Channel 25 V 50A (Tc) 63W (Tc) Surface Mount PG-TO252-3-11

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