SPB21N10

Name: SPB21N10
Brand: SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Availability: InStock

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Description:	MOSFET N-CH 100V 21A TO263-3

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Description

Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	FET Feature:	-
Vgs(th) (Max) @ Id:	4V @ 44µA	Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Gate Charge (Qg) (Max) @ Vgs:	38.4 NC @ 10 V
Rds On (Max) @ Id, Vgs:	80mOhm @ 15A, 10V	FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V	Package:	Tape & Reel (TR) Cut Tape (CT)
Drain To Source Voltage (Vdss):	100 V	Vgs (Max):	±20V
Product Status:	Obsolete	Input Capacitance (Ciss) (Max) @ Vds:	865 PF @ 25 V
Mounting Type:	Surface Mount	Series:	SIPMOS®
Supplier Device Package:	PG-TO263-3-2	Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)	Power Dissipation (Max):	90W (Tc)
Technology:	MOSFET (Metal Oxide)	Base Product Number:	SPB21N