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BSP316PE6327

BSP316PE6327
BSP316PE6327

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Description: MOSFET P-CH 100V 680MA SOT223-4

BSP316PE6327

Description
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Gate Charge (Qg) (Max) @ Vgs: 6.4 NC @ 10 V
Product Status: Obsolete Mounting Type: Surface Mount
Package: Tape & Reel (TR) Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 146 PF @ 25 V
Series: SIPMOS® Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 170µA Supplier Device Package: PG-SOT223-4
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V Mfr: Infineon Technologies
Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Power Dissipation (Max): 1.8W (Ta)
Package / Case: TO-261-4, TO-261AA Drain To Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Technology: MOSFET (Metal Oxide)
FET Feature: -

P-Channel 100 V 680mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Contact Details
Sensor (HK) Limited

Contact Person: Liu Guo Xiong

Tel: +8618200982122

Fax: 86-755-8255222

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