SPI07N60C3HKSA1

Name: SPI07N60C3HKSA1
Brand: Sensor (HK) Limited
Availability: InStock

All Products

MCU IC
(217)

FFC FPC Connectors
(3667)

Clock Fanout Buffer
(2459)

Audio Special Purpose
(1050)

Data Acquisition ICS
(1000)

Embedded ICS
(1000)

Interface ICS
(1000)

Linear IC
(950)

Logic IC
(894)

Memory IC
(984)

Power Management
(939)

RF And Wireless
(995)

Temperature Sensors IC
(1000)

Frequency Multipliers
(934)

Circuit Protection IC
(992)

Discrete Semiconductor
(911)

Polymer Capacitors
(700)

Ultrasonic Sensors
(1000)

Integrated Circuits IC
(1000)

Circuit Protection
(692)

Opto Electronics
(1000)

Coaxial Connectors
(400)

Discrete Semiconductor Products
(853)

Murata Ceramic Filters
(757)

Inductors Coils Chokes
(950)

MIL Spec Connectors
(890)

Integrated Circuits ICs
(27)

I'm Online Chat Now

Product Details: Payment & Shipping Terms:

Description:	MOSFET N-CH 650V 7.3A TO262-3

Contact Now

Description

Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	FET Feature:	-
Vgs(th) (Max) @ Id:	3.9V @ 350µA	Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA	Gate Charge (Qg) (Max) @ Vgs:	27 NC @ 10 V
Rds On (Max) @ Id, Vgs:	600mOhm @ 4.6A, 10V	FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V	Package:	Tube
Drain To Source Voltage (Vdss):	650 V	Vgs (Max):	±20V
Product Status:	Obsolete	Input Capacitance (Ciss) (Max) @ Vds:	790 PF @ 25 V
Mounting Type:	Through Hole	Series:	CoolMOS™
Supplier Device Package:	PG-TO262-3-1	Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	7.3A (Tc)	Power Dissipation (Max):	83W (Tc)
Technology:	MOSFET (Metal Oxide)	Base Product Number:	SPI07N