SPP04N60C3HKSA1

Name: SPP04N60C3HKSA1
Brand: Sensor (HK) Limited
Availability: InStock

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Description:	MOSFET N-CH 650V 4.5A TO220-3

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Description

Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	FET Feature:	-
Vgs(th) (Max) @ Id:	3.9V @ 200µA	Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	TO-220-3	Gate Charge (Qg) (Max) @ Vgs:	25 NC @ 10 V
Rds On (Max) @ Id, Vgs:	950mOhm @ 2.8A, 10V	FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V	Package:	Tube
Drain To Source Voltage (Vdss):	650 V	Vgs (Max):	±20V
Product Status:	Obsolete	Input Capacitance (Ciss) (Max) @ Vds:	490 PF @ 25 V
Mounting Type:	Through Hole	Series:	CoolMOS™
Supplier Device Package:	PG-TO220-3-1	Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	4.5A (Tc)	Power Dissipation (Max):	50W (Tc)
Technology:	MOSFET (Metal Oxide)	Base Product Number:	SPP04N