I'm Online Chat Now

SPP16N50C3HKSA1

SPP16N50C3HKSA1
SPP16N50C3HKSA1

Large Image :  SPP16N50C3HKSA1

Product Details: Payment & Shipping Terms:
Description: MOSFET N-CH 560V 16A TO220-3

SPP16N50C3HKSA1

Description
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs FET Feature: -
Vgs(th) (Max) @ Id: 3.9V @ 675µA Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 66 NC @ 10 V
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V Package: Tube
Drain To Source Voltage (Vdss): 560 V Vgs (Max): ±20V
Product Status: Obsolete Input Capacitance (Ciss) (Max) @ Vds: 1600 PF @ 25 V
Mounting Type: Through Hole Series: CoolMOS™
Supplier Device Package: PG-TO220-3-1 Mfr: Infineon Technologies
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Power Dissipation (Max): 160W (Tc)
Technology: MOSFET (Metal Oxide) Base Product Number: SPP16N

N-Channel 560 V 16A (Tc) 160W (Tc) Through Hole PG-TO220-3-1

Contact Details
Sensor (HK) Limited

Contact Person: Liu Guo Xiong

Tel: +8618200982122

Fax: 86-755-8255222

Send your inquiry directly to us (0 / 3000)