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IPP09N03LA

IPP09N03LA
IPP09N03LA

Large Image :  IPP09N03LA

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Description: MOSFET N-CH 25V 50A TO220-3

IPP09N03LA

Description
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs FET Feature: -
Vgs(th) (Max) @ Id: 2V @ 20µA Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 13 NC @ 5 V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Package: Tube
Drain To Source Voltage (Vdss): 25 V Vgs (Max): ±20V
Product Status: Obsolete Input Capacitance (Ciss) (Max) @ Vds: 1642 PF @ 15 V
Mounting Type: Through Hole Series: OptiMOS™
Supplier Device Package: PG-TO220-3 Mfr: Infineon Technologies
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Power Dissipation (Max): 63W (Tc)
Technology: MOSFET (Metal Oxide) Base Product Number: IPP09N

N-Channel 25 V 50A (Tc) 63W (Tc) Through Hole PG-TO220-3

Contact Details
Sensor (HK) Limited

Contact Person: Liu Guo Xiong

Tel: +8618200982122

Fax: 86-755-8255222

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