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Category: | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs | FET Feature: | - |
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Vgs(th) (Max) @ Id: | 2V @ 20µA | Operating Temperature: | -55°C ~ 175°C (TJ) |
Package / Case: | TO-220-3 | Gate Charge (Qg) (Max) @ Vgs: | 8.3 NC @ 5 V |
Rds On (Max) @ Id, Vgs: | 13.9mOhm @ 30A, 10V | FET Type: | N-Channel |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V | Package: | Tube |
Drain To Source Voltage (Vdss): | 25 V | Vgs (Max): | ±20V |
Product Status: | Obsolete | Input Capacitance (Ciss) (Max) @ Vds: | 1043 PF @ 15 V |
Mounting Type: | Through Hole | Series: | OptiMOS™ |
Supplier Device Package: | PG-TO220-3 | Mfr: | Infineon Technologies |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) | Power Dissipation (Max): | 46W (Tc) |
Technology: | MOSFET (Metal Oxide) | Base Product Number: | IPP14N |
N-Channel 25 V 30A (Tc) 46W (Tc) Through Hole PG-TO220-3
Contact Person: Liu Guo Xiong
Tel: +8618200982122
Fax: 86-755-8255222