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SPU09P06PL

SPU09P06PL
SPU09P06PL

Large Image :  SPU09P06PL

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Description: MOSFET P-CH 60V 9.7A TO251-3

SPU09P06PL

Description
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs FET Feature: -
Vgs(th) (Max) @ Id: 2V @ 250µA Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Gate Charge (Qg) (Max) @ Vgs: 21 NC @ 10 V
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.8A, 10V FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Package: Tube
Drain To Source Voltage (Vdss): 60 V Vgs (Max): ±20V
Product Status: Obsolete Input Capacitance (Ciss) (Max) @ Vds: 450 PF @ 25 V
Mounting Type: Through Hole Series: SIPMOS®
Supplier Device Package: P-TO251-3-1 Mfr: Infineon Technologies
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Power Dissipation (Max): 42W (Tc)
Technology: MOSFET (Metal Oxide) Base Product Number: SPU09P

P-Channel 60 V 9.7A (Tc) 42W (Tc) Through Hole P-TO251-3-1

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Sensor (HK) Limited

Contact Person: Liu Guo Xiong

Tel: +8618200982122

Fax: 86-755-8255222

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