IPI04N03LA

Name: IPI04N03LA
Brand: Sensor (HK) Limited
Availability: InStock

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Description:	MOSFET N-CH 25V 80A TO262-3

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Description

Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	FET Feature:	-
Vgs(th) (Max) @ Id:	2V @ 60µA	Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA	Gate Charge (Qg) (Max) @ Vgs:	32 NC @ 5 V
Rds On (Max) @ Id, Vgs:	4.2mOhm @ 55A, 10V	FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V	Package:	Tube
Drain To Source Voltage (Vdss):	25 V	Vgs (Max):	±20V
Product Status:	Obsolete	Input Capacitance (Ciss) (Max) @ Vds:	3877 PF @ 15 V
Mounting Type:	Through Hole	Series:	OptiMOS™
Supplier Device Package:	PG-TO262-3	Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)	Power Dissipation (Max):	107W (Tc)
Technology:	MOSFET (Metal Oxide)	Base Product Number:	IPI04N