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Category: | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs | FET Feature: | - |
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Vgs(th) (Max) @ Id: | 2V @ 250µA | Operating Temperature: | -55°C ~ 175°C (TJ) |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA | Gate Charge (Qg) (Max) @ Vgs: | 220 NC @ 10 V |
Rds On (Max) @ Id, Vgs: | 3mOhm @ 80A, 10V | FET Type: | N-Channel |
Drive Voltage (Max Rds On, Min Rds On): | 10V | Package: | Tube |
Drain To Source Voltage (Vdss): | 30 V | Vgs (Max): | ±20V |
Product Status: | Obsolete | Input Capacitance (Ciss) (Max) @ Vds: | 8180 PF @ 25 V |
Mounting Type: | Through Hole | Series: | OptiMOS™ |
Supplier Device Package: | PG-TO262-3-1 | Mfr: | Infineon Technologies |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) | Power Dissipation (Max): | 300W (Tc) |
Technology: | MOSFET (Metal Oxide) | Base Product Number: | SPI100N |
N-Channel 30 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3-1
Contact Person: Liu Guo Xiong
Tel: +8618200982122
Fax: 86-755-8255222