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SPI100N03S2L-03

SPI100N03S2L-03
SPI100N03S2L-03

Large Image :  SPI100N03S2L-03

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Description: MOSFET N-CH 30V 100A TO262-3

SPI100N03S2L-03

Description
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs FET Feature: -
Vgs(th) (Max) @ Id: 2V @ 250µA Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Gate Charge (Qg) (Max) @ Vgs: 220 NC @ 10 V
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V Package: Tube
Drain To Source Voltage (Vdss): 30 V Vgs (Max): ±20V
Product Status: Obsolete Input Capacitance (Ciss) (Max) @ Vds: 8180 PF @ 25 V
Mounting Type: Through Hole Series: OptiMOS™
Supplier Device Package: PG-TO262-3-1 Mfr: Infineon Technologies
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Power Dissipation (Max): 300W (Tc)
Technology: MOSFET (Metal Oxide) Base Product Number: SPI100N

N-Channel 30 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3-1

Contact Details
Sensor (HK) Limited

Contact Person: Liu Guo Xiong

Tel: +8618200982122

Fax: 86-755-8255222

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