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Category: | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs | Gate Charge (Qg) (Max) @ Vgs: | 240 NC @ 10 V |
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Product Status: | Obsolete | Mounting Type: | Through Hole |
Package: | Tube | Input Capacitance (Ciss) (Max) @ Vds: | 6450 PF @ 25 V |
Series: | HEXFET® | Vgs (Max): | ±20V |
Vgs(th) (Max) @ Id: | 4V @ 250µA | Supplier Device Package: | TO-220AB |
Rds On (Max) @ Id, Vgs: | 2.3mOhm @ 75A, 10V | Mfr: | Infineon Technologies |
Operating Temperature: | -55°C ~ 175°C (TJ) | FET Type: | N-Channel |
Drive Voltage (Max Rds On, Min Rds On): | 10V | Power Dissipation (Max): | 330W (Tc) |
Package / Case: | TO-220-3 | Drain To Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) | Technology: | MOSFET (Metal Oxide) |
FET Feature: | - |
N-Channel 40 V 75A (Tc) 330W (Tc) Through Hole TO-220AB
Contact Person: Liu Guo Xiong
Tel: +8618200982122
Fax: 86-755-8255222