MT41K256M16TW-107:P Dynamic Random Access Memory 4Gbit Scalability

The MT41K256M16TW-107:P is a DRAM (Dynamic Random Access Memory) chip produced by Micron, belonging to the DDR3L (Low Voltage DDR3) family. Here are some of its key parameters and features:

Basic Parameters

• Storage Capacity: 4Gbit (i.e., 256M x 16bit)
• Data Width: 16-bit
• Package Type: FBGA-96 (Fine-pitch Ball Grid Array with 96 pins)
• Voltage Range: 1.283V to 1.45V (compliant with the low voltage range of DDR3L standard)

Performance Parameters

• Clock Frequency: Up to 933MHz (though actual operating frequency may vary depending on system design and application requirements)
• Access Time: Typically related to the operating frequency, but some references mention an access time of 20ns (possibly a test value under specific conditions)
• Operating Temperature Range: Generally between 0°C to 95°C, but minimum operating temperatures can be as low as -40°C according to different sources

Functional Features

• Backward Compatibility: Supports operation at 1.5V for compatibility with DDR3 devices
• Differential Bi-directional Data Strobe: Enables differential signaling for improved signal stability and noise immunity
• 8n-Prefetch Architecture: Enhances data transfer efficiency
• Differential Clock Inputs (CK, CK#): Utilizes differential clock signals to reduce clock skew and noise
• Programmable CAS Latency (CL), Additive Latency (AL), and CAS Write Latency (CWL): Provides flexible latency settings to accommodate different performance needs
• Self-Refresh Mode: Enables automatic refresh of memory data during idle periods to prevent data loss

Additional Information

• RoHS Compliant: Meets the RoHS (Restriction of Hazardous Substances) standard, making it an environmentally friendly product
• Mounting Style: Surface Mount Device (SMD/SMT), suitable for the miniaturization and integration requirements of modern electronic devices